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Table of contents6 sections · tap to jump
  1. How 2.5D and 3D chip packaging differ
  2. CoWoS-S vs CoWoS-R vs CoWoS-L
  3. How SoIC and Foveros stack dies
  4. Why CoWoS capacity limits AI chip supply
  5. Heat and power delivery in stacked chips
  6. Where ASE, Amkor and GlobalFoundries fit

ArticlechipsDeep read

CoWoS, SoIC, and Foveros: How Advanced Chip Packaging Actually Works

Ahmad JJul 30, 202611 minUpdated Oct 23, 2026

Green circuit board with rows of rectangular semiconductor chips sits on a wooden workbench in a laboratory setting

CoWoS puts dies side by side on an interposer; TSMC's SoIC and Intel's Foveros Direct stack them with copper hybrid bonds. How they differ, who uses them.

A deep read: the full picture, with the receipts.

Signaldefinitive19 independent sources
TechnologyMakerTypeHow the dies connectExample
CoWoS-STSMC2.5DSide by side on one silicon interposerNVIDIA Hopper
CoWoS-LTSMC2.5DSide by side on an RDL interposer with embedded silicon bridgesNVIDIA Blackwell
SoICTSMC3DStacked, joined by copper hybrid bondsAMD Instinct MI300 (on top of CoWoS)
EMIBIntel2.5DA small silicon bridge in the package at the die-to-die seamIntel Data Center GPU Max (EMIB 3.5D, with Foveros)
Foveros-SIntel2.5DTiles mounted on a base dieIntel Core Ultra X7 358H (Panther Lake)
Foveros DirectIntel3DStacked, joined by copper hybrid bondsIntel Xeon 6+ (Clearwater Forest)
CoWoS, SoIC, EMIB and Foveros at a glance. Sources: Jensen Huang via Reuters (Hopper, Blackwell), SemiWiki (CoWoS-L structure), TechInsights (MI300, Panther Lake), Intel's packaging page (EMIB, Foveros types), TrendForce (Clearwater Forest).

How 2.5D and 3D chip packaging differ#

The split between 2.5D and 3D integration is architectural. In 2.5D, the dies sit next to each other on an intermediary layer. TSMC's CoWoS, short for Chip on Wafer on Substrate, mounts them on an interposer: in the original CoWoS-S version, a large piece of silicon placed beneath the logic chips and the HBM stacks, carrying dense copper wiring between them. That silicon wiring is fine enough to run the very wide buses that let high-bandwidth memory sit millimeters from compute. Intel's EMIB takes a lighter route, embedding a small silicon bridge in the package only at the die-to-die seam rather than under the whole footprint. Intel says EMIB has been in mass production since 2017, with Intel and external silicon, for logic-to-logic and logic-to-HBM links. Either way, the package is what puts a processor split into chiplets back together.

In 3D, the dies are stacked on top of one another. The newest versions use hybrid bonding, which IEEE Spectrum described as linking the copper pads on each chip "directly without solder". Removing the solder bumps lets the connections shrink. AMD used a 9-micrometer pitch for the vertical links in its 3D V-Cache CPUs and its MI300 accelerators, IEEE Spectrum reported, and TrendForce reported that TSMC began mass production of SoIC at a 6-micron pitch in 2025. Taiwan's Commercial Times, as relayed by TrendForce in May 2026, reported that SoIC offers 56 times the interconnect density of 2015-era CoWoS. The wires between stacked dies are microns long instead of the millimeters a side-by-side layout needs. The price is heat and bond yield, both covered below.

2.5D versus 3D integration

Dies side by side

2.5D integration

  • Used by: TSMC CoWoS, Intel EMIB and Intel Foveros-S
  • Layout: dies next to each other on an interposer, a small bridge or a base die
  • Strength: buses wide enough to run high-bandwidth memory beside compute
  • Heat: the hot dies sit side by side, none buried under another
  • Best when: memory and compute must sit close at high bandwidth

Dies stacked vertically

3D integration

  • Used by: TSMC SoIC and Intel Foveros Direct
  • Layout: dies stacked and joined with copper hybrid bonds, no solder bumps
  • Strength: vertical links microns long, the denser of the two, at a 9-micron pitch in AMD's MI300 and Intel's Xeon 6+ and 6 microns in TSMC's SoIC from 2025
  • Heat: AMD looks at the total thermal density of the whole stack, its Alan Smith said of the MI350
  • Yield: pre-bond test cannot certify a bond not yet formed, Semiconductor Engineering reported
  • Best when: cache or compute has to sit directly on other logic

CoWoS-S vs CoWoS-R vs CoWoS-L#

CoWoS is not a single recipe, and the variants decide what a package can hold. The difference is what the interposer is made of, as SemiWiki's September 2026 comparison of the three lays out, and that sets how large the package can grow.

That last variant is where NVIDIA moved. NVIDIA CEO Jensen Huang said in January 2025, as Reuters reported, that Hopper uses CoWoS-S and that "as we move into Blackwell, we will use largely CoWoS-L", with CoWoS-S capacity moving over to CoWoS-L. TechInsights' analysis of the HGX B200 describes two GPU dies on a TSMC 4nm-class process co-packaged with eight HBM stacks, under the heading "first commercial instance of CoWoS-L". NVIDIA describes Blackwell as two reticle-limited dies joined by a 10 TB/s chip-to-chip link. The packages keep growing: TSMC said it was mass-producing a 5.5-reticle-size CoWoS in 2026 with yields above 98%, and Wei said on the October 2026 earnings call that TSMC is "working on the 9x reticle size and moving into the 14x reticle size".

How SoIC and Foveros stack dies#

TSMC's SoIC, short for System on Integrated Chips, is its 3D stacking technology, and AMD was its first customer, TrendForce reported in 2024, citing MoneyDJ. In the Instinct MI300, AMD stacked GPU chiplets on top of I/O dies with SoIC hybrid bonding, above a CoWoS silicon interposer, as TechInsights describes it; The Register called the result a mix of 2.5D and 3.5D packaging. The MI350 series kept the layered design. AMD's chief Instinct architect, Alan Smith, told Chips and Cheese that the I/O dies sit in an intermediate layer with "the compute that's above those", built up through a CoWoS stack, and AMD's documentation lists, for the MI350X and MI355X, eight compute dies on TSMC N3P, two I/O dies on N6 and eight 12-high HBM3E stacks, 288GB in all. AMD's 3D V-Cache CPUs use hybrid bonding too, stacking a cache chiplet on the processor die at the same 9-micrometer pitch, IEEE Spectrum reported.

Intel's Foveros is a family, and Intel's own packaging page now splits it by geometry. Foveros-S, which Intel says has been in mass production since 2019 with an active base die, is labelled 2.5D. Panther Lake uses it: TechInsights found the Core Ultra X7 358H's compute, graphics and platform controller tiles mounted face-down on a passive silicon base tile, with the compute tile on Intel 18A. Foveros Direct is the 3D version, a "Cu-to-Cu hybrid bonding interface" in Intel's words. TrendForce reported that it reached volume production in the first half of 2026 in the Xeon 6+ (Clearwater Forest) at a 9-micron bond pitch, with 12 compute tiles on Intel 18A on top of three active base tiles on Intel 3. Intel also combines the two methods: its Data Center GPU Max uses what Intel calls EMIB 3.5D, EMIB and Foveros in one package. On TSMC's October 2026 earnings call, Wei granted that a competitor "offers a very competitive solution", while saying CoWoS "is still the number one choice for our customers".

It only takes one nanosized particle.

Mike Kelly of Amkor, on hybrid bonding, to Semiconductor Engineering, July 2026

Yield is the quiet constraint in every 3D stack. As Semiconductor Engineering put it in July 2026, pre-bond test can establish that a die works, but post-bond electrical test "remains the most direct evidence that the interface works", and known-good-die selection "doesn't guarantee a successful final interface". Once two good dies are bonded, a bad bond spends both, so the assembled yield is roughly the product of each die's yield and the bond yield. The finer the pitch, the less it takes to spoil a bond: Amkor's Mike Kelly told the publication that "the go-to minimum pitch now is about six microns", and that a single tiny particle is enough.

Why CoWoS capacity limits AI chip supply#

CoWoS became the limit on AI accelerators not because the technology failed but because demand grew faster than the lines. A CoWoS package needs an interposer that is itself a large piece of silicon or RDL, often bigger than the logic dies it hosts, so the bigger the package, the fewer fit on each interposer wafer. TSMC has been adding capacity fast. Huang said in January 2025 that advanced packaging capacity was "probably four times" what it had been less than two years earlier. In August 2026, TSMC vice president Jun He said at the OCP APAC Summit that TSMC had nearly doubled CoWoS capacity each year for three years, TrendForce reported, and Economic Daily News reported that TSMC runs 10 advanced packaging facilities. He added: "We haven't fully met demand yet, but we're getting very close."

The supply chain around CoWoS is tight too. Jun He warned of memory shortages and tight ABF substrate supply. On October 8, 2026, GlobalFoundries announced an agreement with an initial five-year term, which it valued at 2 billion dollars, to supply silicon interposers for TSMC's CoWoS ecosystem from its fab in Malta, New York; volume production has not begun. Asked about the deal on TSMC's October 15 earnings call, Wei said: "we have a little bit of shortage on the back end." When NVIDIA, AMD and others all draw on one interposer-and-bonding pool, packaging allocation, not only logic-wafer supply, sets how many accelerators ship, on top of what TSMC charges for the wafers themselves. The point is blunt for a fabless designer.

A fabless design win means little without a packaging slot to go with it.

Heat and power delivery in stacked chips#

Packing dies this close concentrates power and heat. AMD's Alan Smith told Chips and Cheese that for the MI350, AMD considers the whole stack, from the CoWoS layer through the I/O dies to "the compute that's above those", and looks at "the total thermal density of that whole stack" and the thermal interface materials needed for heat removal. AMD's specification pages rate the MI350X at 1000W and the MI355X at 1400W typical board power.

Backside power delivery, which feeds current from beneath the transistors, is the other lever. Intel's 18A has it as PowerVia, and TechInsights counts Panther Lake's compute tile as Intel's first high-volume client implementation of it. TSMC's first node with backside power, which it calls Super Power Rail, is A16, Semiconductor Engineering reported. Wei said in October 2026 that using backside power "is based on your need for your product", and that some products, like mobile phones, do not use it.

Where ASE, Amkor and GlobalFoundries fit#

CompanyRole around TSMC's packagingSource
TSMCBuilds the CoWoS packages for NVIDIA's Hopper and Blackwell, and the SoIC-on-CoWoS stack in AMD's MI300Jensen Huang via Reuters, January 2025; TechInsights
ASELists Fanout Chip-on-Substrate-Bridge (FOCoS-Bridge) and TSV-based 2.5D and 3D IC among the pillars of its VIPack platformASE, VIPack announcement, June 2022
AmkorSigned a 10-year agreement under which TSMC will buy advanced packaging and test services from Amkor; Amkor's Peoria, Arizona packaging campus is expected to serve as TSMC's key domestic packaging partnerTrendForce, June 2026
GlobalFoundriesAgreed to supply silicon interposers for TSMC's CoWoS ecosystem from Malta, New York, under an agreement with an initial five-year termGlobalFoundries announcement, October 2026, via Taiwan News
Who does what around TSMC's advanced packaging, from pages read on 2026-10-22. Each row names its source.

ASE and Amkor, the large outsourced assembly and test houses (OSATs), are not absent from advanced packaging. ASE's VIPack platform includes bridge-based fan-out and TSV-based 2.5D and 3D packaging. But the accelerators this page covers, NVIDIA's Blackwell and AMD's MI300 and MI350, are built on TSMC's CoWoS, with SoIC in AMD's case, and TSMC now works with outside companies to extend that supply chain rather than hand it over: it agreed to buy packaging and test services from Amkor and has contracted GlobalFoundries for interposers. ESM China reported, as TrendForce relayed in June 2026, that TSMC plans its own first Arizona advanced packaging plant, with CoWoS and 3D-IC capacity.

None of this is quick to copy. On TSMC's October 2026 call, Wei said TSMC was in "real-world production of 5x reticle size" and added: "I don't believe that anybody can do that today except Taiwan Semiconductor." We have argued that the foundry moat moved to the package. The standard for die-to-die links, UCIe, helps chiplets from different vendors talk to each other. Its latest version, UCIe 3.0, covers the die-to-die physical layer, protocols and software stack, and the consortium says UCIe 2.0 added support for 3D packaging. But it defines the interface, not the package: a UCIe-compliant chiplet still needs a CoWoS, SoIC, EMIB or Foveros line to physically build it.

What is the difference between CoWoS, SoIC and Foveros?

CoWoS is TSMC's 2.5D packaging: dies sit side by side on a silicon interposer (CoWoS-S) or on a redistribution-layer interposer with embedded silicon bridges (CoWoS-L). SoIC is TSMC's 3D stacking, which joins dies copper to copper with hybrid bonds. Foveros is Intel's family: Intel labels Foveros-S, with tiles on a base die, as 2.5D, and Foveros Direct, which uses copper hybrid bonding, as 3D. NVIDIA's Blackwell uses largely CoWoS-L, AMD's MI300 uses SoIC on top of CoWoS, and Intel's Panther Lake uses Foveros-S.

What is the difference between 2.5D and 3D chip packaging?

In 2.5D packaging, such as TSMC's CoWoS and Intel's EMIB, the dies sit side by side on an interposer or a small embedded bridge that carries wide, dense wiring between them. In 3D packaging, such as TSMC's SoIC and Intel's Foveros Direct, the dies are stacked on top of one another and bonded with copper-to-copper hybrid bonds. 3D reaches higher interconnect density: Commercial Times, as relayed by TrendForce, reported that SoIC offers 56 times the interconnect density of 2015-era CoWoS. The trade-offs are heat in the stack and bond yield.

What are CoWoS-S, CoWoS-R, and CoWoS-L?

They are the three variants of TSMC's CoWoS 2.5D packaging, and they differ in the interposer. CoWoS-S uses one large silicon interposer, with the densest routing of the three. CoWoS-R uses a redistribution-layer (RDL) interposer made of copper wiring in polymer dielectric, in place of the silicon interposer. CoWoS-L uses an RDL interposer with small embedded silicon bridges, called local silicon interconnects, placed only where the densest links are needed. NVIDIA CEO Jensen Huang said Hopper uses CoWoS-S and Blackwell uses largely CoWoS-L.

Is Intel's Foveros 2.5D or 3D?

Both, depending on the version. Intel's packaging page labels Foveros-S as 2.5D; it has been in mass production since 2019, and TechInsights found Panther Lake's tiles mounted on a passive silicon base tile with it. Foveros Direct is Intel's 3D version, with a copper-to-copper hybrid bonding interface. TrendForce reported that Foveros Direct reached volume production in the first half of 2026 in the Xeon 6+ (Clearwater Forest) at a 9-micron bond pitch.

How is TSMC's SoIC different from Intel's Foveros Direct?

Both stack dies vertically with copper hybrid bonds. TrendForce reported that TSMC began mass production of SoIC at a 6-micron bond pitch in 2025, and that Foveros Direct reached volume at 9 microns in Intel's Xeon 6+ in 2026. The bigger difference is who uses them: SoIC is a TSMC foundry service, and AMD was its first customer, in the Instinct MI300. Foveros Direct is Intel's, and it reached volume production in the first half of 2026 with Intel's own Xeon 6+, TrendForce reported.

What is hybrid bonding?

Hybrid bonding joins two dies by bonding their copper pads directly, with no solder bumps in between. Removing the bumps lets the connections shrink: AMD used a 9-micrometer pitch in its 3D V-Cache CPUs and MI300 accelerators, IEEE Spectrum reported, and TSMC moved SoIC to 6 microns in 2025, per TrendForce. The trade is that a bad bond can spoil two good dies, and pre-bond test cannot prove a connection that has not yet formed. Amkor's Mike Kelly told Semiconductor Engineering that "it only takes one nanosized particle".

Is CoWoS still a bottleneck for AI chips in 2026?

It is still tight, though less so. TSMC vice president Jun He said in August 2026 that TSMC had nearly doubled CoWoS capacity each year for three years, and added: "We haven't fully met demand yet, but we're getting very close." On October 15, 2026, TSMC CEO C.C. Wei said "we have a little bit of shortage on the back end", a week after GlobalFoundries announced an agreement with an initial five-year term to supply silicon interposers for TSMC's CoWoS ecosystem.

Why did CoWoS become a bottleneck for AI chips?

A CoWoS package needs a large interposer, often bigger than the logic dies on it, so big packages use up interposer wafers quickly. Demand from AI accelerators grew faster than that capacity, and NVIDIA, AMD and others all draw on the same TSMC lines, so packaging allocation, not only logic-wafer supply, sets how many accelerators ship. Huang said in January 2025 that advanced packaging capacity was "probably four times" what it had been less than two years earlier.

Can OSATs like ASE and Amkor replace TSMC's packaging?

They offer advanced packaging of their own: ASE's VIPack platform includes bridge-based fan-out and TSV-based 2.5D and 3D packaging. But the AI accelerators covered here, NVIDIA's Blackwell and AMD's MI300 and MI350, are built on TSMC's CoWoS. TSMC works with outside companies rather than handing that work over: under a 10-year agreement it will buy advanced packaging and test services from Amkor, and GlobalFoundries agreed to supply it with silicon interposers.

Sources

  1. Intel Foundry: advanced packaging (EMIB since 2017, EMIB 3.5D, Foveros-S 2.5D since 2019, Foveros Direct 3D Cu-to-Cu hybrid bonding)intel.com
  2. AMD: Instinct MI350 Series GPUs (288GB HBM3E, 8TB/s)amd.com
  3. AMD: 3D V-Cache technology (hybrid bond 3D stacking in Ryzen X3D and EPYC)amd.com
  4. AMD ROCm docs: Instinct MI350 Series microarchitecture (8 stacked XCDs on N3P, 2 IODs on N6, eight 12-Hi HBM3E stacks, 288GB)rocm.docs.amd.com
  5. Chips and Cheese: AMD's MI350, interview with chief Instinct architect Alan Smith (Jun 2025), stacking and thermal designchipsandcheese.com
  6. Reuters via Business Day: Nvidia's advanced packaging needs remain strong, Huang says (Jan 16, 2025)businessday.co.za
  7. NVIDIA: Blackwell architecture (208 billion transistors, TSMC 4NP, two reticle-limited dies, 10 TB/s link)nvidia.com
  8. TechInsights: NVIDIA HGX B200 analysis (two GPU dies, eight HBM3E, first commercial CoWoS-L) (Apr 2025)techinsights.com
  9. SemiWiki: Comparison of TSMC CoWoS-S, CoWoS-R, and CoWoS-L (Sep 22, 2026)semiwiki.com
  10. TechInsights: AMD Instinct MI300X floorplan analysis (SoIC hybrid bonding above a CoWoS interposer)techinsights.com
  11. IEEE Spectrum: AMD's Next GPU Is a 3D-Integrated Superchip (Dec 6, 2023)spectrum.ieee.org
  12. The Register: AMD MI300 launch (Dec 6, 2023), 2.5D and 3.5D packagingtheregister.com
  13. TrendForce: TSMC reportedly secures major clients for SoIC (Apr 11, 2024, citing MoneyDJ)trendforce.com
  14. TrendForce Insights: hybrid bonding race (Sep 10, 2026)insights.trendforce.com
  15. TrendForce: Intel unveils Xeon 6+ Clearwater Forest with 18A chiplets and Foveros Direct 3D (Mar 3, 2026)trendforce.com
  16. TechInsights: Intel Panther Lake 18A advanced packaging quick look (Feb 18, 2026)techinsights.com
  17. TrendForce: TSMC sees AI wafer demand rising, CoWoS roadmap (May 14, 2026, citing Commercial Times)trendforce.com
  18. Design & Reuse: TSMC highlights 2nm and advanced packaging progress (Jul 9, 2026)design-reuse.com
  19. TrendForce: TSMC's 5.5-reticle CoWoS reportedly tops 99% yield, flags memory and ABF (Aug 11, 2026)trendforce.com
  20. Benzinga via Webull: TSMC Q3 2026 earnings call transcript (Oct 15, 2026)webull.com
  21. GlobalFoundries announcement via Taiwan News (GlobeNewswire): US-based silicon interposer supply for TSMC's CoWoS (Oct 8, 2026)taiwannews.com.tw
  22. Embedded Computing Design: GlobalFoundries and TSMC interposer agreement (Oct 13, 2026)embeddedcomputing.com
  23. Semiconductor Engineering: TSMC Tech Symposium 2026, by the numbers (Apr 27, 2026)semiengineering.com
  24. Semiconductor Engineering: Can fine-pitch hybrid bonding go high volume? (Jul 16, 2026)semiengineering.com
  25. TrendForce: TSMC and Amkor 10-year Arizona advanced packaging partnership (Jun 17, 2026)trendforce.com
  26. ASE: VIPack advanced packaging platform (Jun 1, 2022)aseglobal.com
  27. UCIe Consortium: specifications (UCIe 3.0)uciexpress.org
  28. AMD: Instinct MI355X GPU specifications (1400W typical board power)amd.com
  29. AMD: Instinct MI350X GPU specifications (1000W typical board power)amd.com

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